Substrat
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4H-N 8 Zoll SiC Substrat Wafer Silicon Carbide Dummy Research Grade 500um Dicke
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4H-N/6H-N SiC Wafer Fuerschung Produktioun Dummy Grad Dia150mm Silicon Carbide Substrat
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8 Zoll 200 mm Silicon Carbide SiC Wafers 4H-N Typ Produktiounsgrad 500um Dicke
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Dia300x1.0mmt Thickness Saphir Wafer C-Plane SSP/DSP
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8 Zoll 200mm Saphir Substrat Saphir wafer dënn Dicke 1SP 2SP 0.5mm 0.75mm
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8 Zoll SiC Silicon Carbide Wafer 4H-N Typ 0.5mm Produktiounsgrad Fuerschungsgrad personaliséiert poléiert Substrat
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HPSI SiC Wafer Ø: 3 Zoll Dicke: 350um ± 25 µm fir Power Electronics
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Single Kristall Al2O3 99.999% Dia200mm Saphir wafers 1.0mm 0.75mm deck
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156mm 159mm 6 Zoll Saphir Wafer fir CarrierC-Plane DSP TTV
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C/A/M Achs 4 Zoll Saphir wafers Eenkristall Al2O3, SSP DSP Héichhärte Saphir Substrat
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3 Zoll High Purity Semi-Isolating (HPSI) SiC Wafer 350um Dummy Grad Prime Grade
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P-Typ SiC Substrat SiC wafer Dia2inch neit Produkt