Substrat
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Silicon Carbide SiC Ingot 6inch N Typ Dummy / Prime Grad Dicke kann personaliséiert ginn
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SiC Ingot 4H-N Typ Dummy Grad 2inch 3inch 4inch 6inch deck:＞10mm
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HPSI SiC Wafer Ø: 3 Zoll Dicke: 350um ± 25 µm fir Power Electronics
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3 Zoll High Purity Semi-Isolating (HPSI) SiC Wafer 350um Dummy Grad Prime Grade
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Sic Substrat Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2 Zoll 6H-N Silicon Carbide Substrat Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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2 Zoll Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Thickness
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2 Zoll Silicium Carbide Substrat 6H-N duebelsäiteg poléiert Duerchmiesser 50.8mm Produktiounsgrad Fuerschungsgrad
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p-Typ 4H/6H-P 3C-N TYPE SIC Substrat 4 Zoll 〈111〉± 0,5° Zero MPD
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SiC Substrat P-Typ 4H/6H-P 3C-N 4 Zoll mat enger Dicke vun 350um Produktiounsgrad Dummy Grad
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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P-Typ SiC Wafer 4H/6H-P 3C-N 6 Zoll Dicke 350 μm mat Primär Flat Orientatioun