SiC
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6 Silicium Carbide 4H-SiC Semi-isoléierend Ingot, Dummy Grad
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SiC Ingot 4H Typ Dia 4inch 6inch Dicke 5-10mm Fuerschung / Dummy Grad
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3 Zoll High Purity (Ongedopt) Silicium Carbide Wafers semi-isoléierend Sic Substrate (HPSl)
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Sic Substrat Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2 Zoll Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Thickness
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2 Zoll Siliziumkarbidsubstrat 6H-N duebelsäiteg poléiert Duerchmiesser 50.8mm Produktiounsgrad Fuerschungsgrad
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N-Type SiC Komposit Substrat Dia6inch Héich Qualitéit Monokristallin a geréng Qualitéit Substrat
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Semi-isoléierend SiC Komposit Substrat Dia2inch 4inch 6inch 8inch HPSI
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N-Typ SiC op Si Komposit Substraten Dia6inch
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SiC Substrat Dia200mm 4H-N an HPSI Silicon Carbide
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3 Zoll SiC Substrat Produktioun Dia76.2mm 4H-N
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SiC Substrat P an D Grad Dia50mm 4H-N 2inch