SiC
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SiC Substrat Dia200mm 4H-N an HPSI Silicon Carbide
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3 Zoll SiC Substrat Produktioun Dia76.2mm 4H-N
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SiC Substrat P an D Grad Dia50mm 4H-N 2inch
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4H-N/6H-N SiC Wafer Fuerschung Produktioun Dummy Grad Dia150mm Silicon Carbide Substrat
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2 Zoll SiC Ingot Dia50.8mmx10mmt 4H-N Monokristall
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200mm SiC Substrat Dummy Grad 4H-N 8inch SiC wafer
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4H-N Dia205mm SiC Som aus China P an D Grad Monocrystaline
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6inch SiC Epitaxiy wafer N / P Typ akzeptéieren personaliséiert
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Dia150mm 4H-N 6inch SiC Substrat Produktioun an Dummy Grad
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4 Zoll SiC Epi Wafer fir MOS oder SBD
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4 Zoll SiC Wafers 6H Semi-isoléierend SiC Substrate Prime, Fuerschung, an Dummy Grad
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6 Zoll HPSI SiC Substrat wafer Silicon Carbide Semi-insultant SiC wafers