Substrat
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TVG Prozess op Quarz Saphir BF33 wafer Glas wafer punching
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Single Crystal Silicon Wafer Si Substrat Typ N / P Optional Silicon Carbide Wafer
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N-Type SiC Komposit Substrat Dia6inch Héich Qualitéit Monokristallin a geréng Qualitéit Substrat
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Semi-isoléierend SiC op Si Composite Substraten
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Semi-isoléierend SiC Komposit Substrat Dia2inch 4inch 6inch 8inch HPSI
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P-Typ SiC Substrat SiC wafer Dia2inch neit Produkt
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N-Typ SiC op Si Komposit Substraten Dia6inch
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SiC Substrat Dia200mm 4H-N an HPSI Silicon Carbide
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3 Zoll SiC Substrat Produktioun Dia76.2mm 4H-N
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SiC Substrat P an D Grad Dia50mm 4H-N 2inch
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TGV Glas Substrater 12 Zoll wafer Glas Punching
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4H-N/6H-N SiC Wafer Fuerschung Produktioun Dummy Grad Dia150mm Silicon Carbide Substrat