SiC
-
SiC Ingot 4H-N Typ Dummy Grad 2inch 3inch 4inch 6inch deck:＞10mm
-
200mm SiC Substrat Dummy Grad 4H-N 8inch SiC Wafer
-
4H-N Dia205mm SiC Som aus China P an D Grad Monocrystaline
-
6inch SiC Epitaxiy wafer N / P Typ akzeptéieren personaliséiert
-
Dia150mm 4H-N 6inch SiC Substrat Produktioun an Dummy Grad
-
4 Zoll SiC Epi Wafer fir MOS oder SBD
-
2 Zoll SiC Ingot Dia50.8mmx10mmt 4H-N Monokristall
-
4 Zoll SiC Wafers 6H Semi-isoléierend SiC Substrate Prime, Fuerschung, an Dummy Grad
-
6 Zoll HPSI SiC Substrat wafer Silicon Carbide Semi-insultant SiC wafers
-
4 Zoll Semi-beleidegt SiC wafers HPSI SiC Substrat Prime Production Grad
-
3 Zoll 76,2 mm 4H-Semi SiC Substrat Wafer Silicon Carbide Semi-insultant SiC Wafers
-
3 Zoll Dia76.2mm SiC Substrater HPSI Prime Fuerschung an Dummy Grad