SiC
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4H-N 8 Zoll SiC Substrat Wafer Silicon Carbide Dummy Research Grade 500um Dicke
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4H-N/6H-N SiC Wafer Fuerschung Produktioun Dummy Grad Dia150mm Silicon Carbide Substrat
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12 Zoll SIC Substrat Silicium Carbide Prime Grad Duerchmiesser 300mm grouss Gréisst 4H-N Gëeegent fir héich Kraaft Apparat Hëtzt dissipation
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HPSI SiC Wafer Ø: 3 Zoll Dicke: 350um ± 25 µm fir Power Electronics
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8 Zoll SiC Silicon Carbide Wafer 4H-N Typ 0.5mm Produktiounsgrad Fuerschungsgrad personaliséiert poléiert Substrat
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3 Zoll High Purity Semi-Isolating (HPSI) SiC Wafer 350um Dummy Grad Prime Grade
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P-Typ SiC Substrat SiC wafer Dia2inch neit Produkt
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8 Zoll 200 mm Silicon Carbide SiC Wafers 4H-N Typ Produktiounsgrad 500um Dicke
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2 Zoll 6H-N Silicon Carbide Substrat Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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3 Zoll High Purity (Ongedopt) Silicon Carbide Wafers semi-isoléierend Sic Substrate (HPSl)
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Au Beschichtete Wafer, Saphir Wafer, Silicium Wafer, SiC Wafer, 2 Zoll 4 Zoll 6 Zoll, Gold Beschichtete Dicke 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C Typ 2inch 3inch 4inch 6inch 8inch